Course
PostgraduateSemester
Sem. IISubject Code
AVM621Subject Title
Micro/Nano Fabrication TechnologySyllabus
Classical scaling in CMOS, Moore’s law, clean room concept, material properties, crystal structure, lattice, growth of single crystal Si, cleaning and etching, thermal oxidation, dopant diffusion in silicon, deposition & growth (PVD, CVD, ALD, epitaxy, MBE, ALCVD etc.), ion- implantation, lithography (Photolithography, EUV lithography, X-ray lithography, e-beam lithography etc.), etch and cleaning, CMOS process integration, back end of line processes (Copper damascene process, Metal interconnects; Multi-level metallization schemes), advanced technologies (SOI MOSFETs, Strained Si, Silicon-Germanium MOS, High K, metal gate electrodes and work function engineering, double gate MOSFETs, FinFETs, Gate All Around (GAA) etc..), emerging research devices and architectures
Text Books
Same as Reference
References
1. Silicon VLSI Technology, James Plummer, M. Deal and P. Griffin, Prentice Hall Electronics.
2. The Science and Engineering of Microelectronics, Stephen Campbell, Oxford University Press, 1996.
3. VLSI Technology, S.M. Sze (Ed), 2nd Edition, McGraw Hill, 1988.
4. ULSI Technology, C.Y. Chang and S.M.Sze (Ed), McGraw Hill Companies Inc, 1996.
5. Peer reviewed international journals such as IEEE Electronic Device Letters, Transactions on Electron devices, Journal o Microelectronics, etc and conference proceedings such as International Electron Device Meeting (IEDM), IRPS etc.
Course Outcomes (COs):
CO1: Gain the ability to understand basics of scaling, Moore’s law, understand the importance of crystal planes, crystal orientation, various semiconductor lattices.
CO2: Gain the ability to understand basics of scaling, Moore’s law, understand the importance of crystal planes, crystal orientation, various semiconductor lattices.
CO3: Develop proficiency in various semiconductor fabrication techniques such as photolithography techniques, semiconductor etching techniques (dry and wet). Understanding various interconnect schemes.
CO4: Ability to evaluate the importance of high-k and low-k dielectric materials.