Syllabus

Fundamentals of Semiconductors: Carrier concentration of semiconductor, Transport Equations, P-N Junction Diode, Schottky Junction Diode and MOSFET. Fundamentals of Compound Sem- iconductors: Introduction of Compound Semiconductors, Properties of Compound semiconduc- tors, Synthesis of Compound Semiconductors.

High Frequency Devices: Essential Condition of High frequency device and compound semicon- ductor, Fundamentals of MESFET, Concept of Pinch off and threshold voltage, I-V Characteris- tics of MESFET, trans conductance , equivalent circuit and figure of merits of MESFET, Short channel effect , Velocity saturation and velocity overshoot effect of GaAs based MESFET, Evo- lution of HEMT from MESFET structure, HEMT and triangular potential well, I-V and gate control, Fabrication of MESFET and HEMT structures.

Optical Devices: Fundamentals of compound semiconductor based optical devices, Optical den- sity of States, fundamentals and formation of Heterostructures devices, Fundamentals of LED, essential band structures of LED. Fundamentals of semiconductor LASER with detail theory.

Technology: Synthesis of Compound semiconductors, Fabrication of MESFET and HEMT struc- tures, Fabrication of LED and LASER structures.