Syllabus

Classical scaling in CMOS, Moore’s Law, Clean room concept, Material properties,crystal struc- ture, lattice, Growth of single crystal Si, Cleaning and etching, Thermaloxidation, Dopant diffu- sion in silicon, Deposition & Growth (PVD, CVD, ALD,epitaxy, MBE, ALCVD etc.),Ion-im- plantation, Lithography (Photolithography, EUVlithography, X-ray lithography, e-beam lithog- raphy etc.), Etch and Cleaning, CMOSProcess integration, Back end of line processes (Copper damascene process, Metalinterconnects; Multi-level metallization schemes), Advanced technol- ogies(SOIMOSFETs, Strained Si, Silicon-Germanium MOS, metal semiconductor source /drain junctions, High K, metal gate electrodes and work function engineering,Double gate MOSFETs, FinFETs, TunnelFETsetc..) , emerging research devices andarchitectures (Nanowire FETs, CNT FETs, Graphene transistors, Organic FETs etc..)