Syllabus
Review of quantum mechanics, E-K diagrams, effective mass, electrons and holes in semiconductors, band diagram of silicon, carrier concentration, carrier statistics, carrier transport, junction devices(P-N junction, Metal –semiconductor junctions, solar cells etc.), MOS capacitor as a building block for MOSFETs (Ideal MOS, real/Non ideal MOS, band diagrams, C-V characteristics, electrostatics of a MOSCAP), MOSFET, I-V characteristics, scaling, short channel and narrow channel effects, high field effects, Reliability of transistor.
Text Books
Same as Reference
References
1. Semiconductor Physics and Devices: Basic Principles, McGraw-Hill, Donald A Neamen, ISBN 0-256-24214-3, 1997.
2. Fundamentals of Modern VLSI Devices, Yuan Taur & Tak H Ning, Cambridge University Press, 1998.
3. Semiconductor Device Fundamentals, Robert F. Pierret, , Addison-Wesley, ISBN 020154393-1, 1995.
4. Physics and Technology, E. H. Nicollian and J. R. Brews, MOS, John Wiley, 1982.
5. Complete Guide to Semiconductor Devices, K. K. Ng, McGraw Hill, 1995.
Course Outcomes (COs):
CO1: Learning the basic of Quantum mechanics, Crystal structure and Solution of Schrodinger equations for generating Band Diagram. The significance of the band diagram is also discussed to understand the properties of different Semiconductors.
CO2: Strengthen the theoretical concept of the transport properties of Micro and Nano Semiconductor devices.
CO3: Detail understanding of different semiconductor devices in Micro and Nano scale followed by analytical modelling.
CO4: Introduction of C-MOS scaling from Micro to Nano transistor and short channel effect.