Course
PostgraduateSemester
Sem. ISubject Code
AVR613Subject Title
Microwave Semiconductor DevicesSyllabus
Transient and ac behavior of p-n junctions, effect of doping profile on the capacitance of p-n junctions, noise in p-n junctions, high-frequency equivalent circuit, varactor diode and its applications; Schottky effect, Schottky barrier diode and its applications; Heterojunctions. Tunneling process in p-n junction and MIS tunnel diodes, V-I characteristics and device performance, backward diode. Impact ionization, IMPATT and other related diodes, small-signal analysis of IMPATT diodes. Two-valley model of compound semiconductors, vd-E characteristics, Gunn effect, modes of operation, small-signal analysis of Gunn diode, power frequency limit. Construction and operation of microwave PIN diodes, equivalent circuit, PIN diode switches, limiters and modulators. High frequency limitations of BJT, microwave bipolar transistors, heterojunction bipolar transistors; Operating characteristics of MISFETs and MESFETs, short-channel effects, high electron mobility transistor.
Text Books
Same as Reference
References
1. Microwave Devices and Circuits, Liao, S. Y., 3rd Ed., Pearson Education 2002.
2. R.F. MEMS: Theory, Design and Technology, Rebeiz, M. G., 2nd Ed., Wiley Interscience, 2003.
3. Physics of Semiconductor Devices, Sze, S. M., and Ng, K. K., 3rd Ed., Wiley-Interscience 2006.
4. Microwave Devices, Circuits and Sub-Systems, Glover, I. A., Pennock, S. R. and Shepherd, P. R., 4th Ed., John Wiley & Sons, 2005.
5. RF and Microwave Semiconductor Device Handbook, Golio, M., CRC Press 2002.
Course Outcomes (COs):
CO1: Understand fundamentals of semiconductor devices and high frequency modelling of compound semiconductors.
CO2: Understand the modelling of Schottky and MESFET
CO3: Design devices at frequency zone using MESFET and HEMT
CO4: Design microwave and RF devices using IMPATT Diode, PIN diode and other high-frequency devices