Course
PostgraduateSemester
ElectivesSubject Code
AVM877Subject Title
Compound semiconductor devices and TechnologySyllabus
Fundamentals of Semiconductors: Carrier concentration of semiconductor, Transport Equations, P-N Junction Diode, Schottky Junction Diode and MOSFET. Fundamentals of Compound Semiconductors: Introduction of Compound Semiconductors, Properties of Compound semiconductors, Synthesis of Compound Semiconductors.
High Frequency Devices: Essential Condition of High frequency device and compound semiconductor, Fundamentals of MESFET, Concept of Pinch off and threshold voltage, I-V characteristics of MESFET, trans conductance , equivalent circuit and figure of merit of MESFET, Short channel effect , Velocity saturation and velocity overshoot effect of GaAs based MESFET, Evolution of HEMT from MESFET structure, HEMT and triangular potential well, I-V and gate control, Fabrication of MESFET and HEMT structures. Optical Devices: Fundamentals of compound semiconductor based optical devices, Optical density of States, fundamentals and formation of Heterostructures devices
Fundamentals of LED, essential band structures of LED. Fundamentals of semiconductor LASER with detail theory.
Technology: Synthesis of Compound semiconductors, Fabrication of MESFET and HEMT structures, Fabrication of LED and LASER structures.
Text Books
Same as Reference
References
1. Semiconductor Optoelectronic Devices, Bhattacharya Pallab, Pearson.
2. Semiconductor Devices, M.K.Achuthan and K N Bhat, The McGraw Hill.
3. Fundamentals of Semiconductor Fabrication, Gary S. May, Simon M. Sze, Wiley.
Course Outcomes (COs):
CO1: Understand fundamentals of semiconductor devices, the significance of the band diagram and properties of different Semiconductors.
CO2: Understand different compound semiconductors and fundamentals properties.
CO3: Analyse the modelling of Velocity overshoot effect, Short channel effect of MESFET.
CO4: Study fabrication rules to realize the Schottky and MESFET. Extended version of MESFET at high-frequency operations, heterostructure, HEMT and basic device diagram. Fundamentals limitations to fabricate HEMT and MESFET at High frequency.
CO5: Study the fundamentals of compound semiconductor-based optical devices. A detailed discussion on LED, LASER, etc.